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MDD 200
High Power
Diode Modules
I FRSM = 2x 350 A
I FAVM = 2x 224 A
V RRM = 1400-2200 V
V RSM
V
V RRM
V
Type
3
1
2
1
2
3
1500
1700
1900
2300
1400
1600
1800
2200
MDD 200-14N1
MDD 200-16N1
MDD 200-18N1
MDD 200-22N1
E72873
Symbol
Conditions
Maximum Ratings
Features
I FRMS
I FAVM
I FSM
T VJ = T VJM
T C = 100°C; 180° sine
T VJ = 45°C; t = 10 ms
V R = 0 t = 8.3 ms
(50 Hz)
(60 Hz)
350
224
10500
11200
A
A
A
A
? International standard package
? Direct copper bonded Al 2 O 3 ceramic
with copper base plate
? Planar passivated chips
? Isolation voltage 3600 V~
T VJ = T VJM ;
V R = 0
t = 10 ms
t = 8.3 ms
(50 Hz)
(60 Hz)
9100
9700
A
A
Applications
I t
A s
2
T VJ = 45°C;
V R = 0
T VJ = T VJM ;
V R = 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
551000
527000
414000
395000
2
A 2 s
A 2 s
A 2 s
? Supplies for DC power equipment
? DC supply for PWM inverter
? Field supply for DC motors
? Battery DC power supplies
T VJ
T VJM
T stg
V ISOL
50/60 Hz, RMS
I ISOL < 1 mA
t = 1 min
t=1s
-40...+150
150
-40...+125
3000
3600
°C
°C
°C
V~
V~
Advantages
? Space and weight savings
? Simple mounting
? Improved temperature and power cycling
? Reduced protection circuits
M d
Weight
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
2.25 - 2.75
4.5 - 5.5
120
Nm
Nm
g
Dimensions in mm (1 mm = 0.0394“)
Symbol
Conditions
Characteristics Values
I RRM
V F
V R = V RRM ;
I F = 300 A;
T VJ = T VJM
T VJ = 25°C
20
1.3
mA
V
V T0
r t
R thJC
R thJK
Q S
I RM
d S
d A
a
For power-loss calculations only
T VJ = T VJM
per diode; DC current
per module
per diode; DC current
per module
T VJ = 125°C; I F = 300 A; -di/dt = 50 A/μs
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
0.8
0.6
0.130
0.065
0.230
0.115
625
275
12.7
9.6
50
V
m W
K/W
K/W
K/W
K/W
μC
A
mm
mm
m/s 2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
? 2008 IXYS All rights reserved
20080128a
1-3
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